DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener ...
Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...
Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality ...
The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Cities have air-quality monitoring stations where pollutants such as NO₂, CO, and SO₂ are measured, while industrial systems ...
Transphorm Inc. has unveiled reportedly the first 600 V GaN (Gallium Nitride)-based, low-profile PQFN products and expanded its product portfolio in the industry-standard TO220 packages. Transphorm ...
A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...
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