Science Daily

N-channel diamond field-effect transistor

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Semiconductor Engineering

External Resistance Reduction By Nanosecond Laser Anneal In Si/SiGe CMOS Technology

We report on a significant pFET external resistance reduction (~40%) and corresponding 10% RON decrease by nanosecond laser annealing of S/D structures applicable to advanced technology nodes.
Electronic Design

Solving the contact resistance challenge for 7nm and beyond CMOS

With the development of novel titanium-silicidation techniques, imec Ph.D. student Hao Yu presents improved source/drain contact schemes which help solving the contact resistance challenge for ...
EDN

1-Channel 150 mA CMOS LDO Regulators

ROHM offers a wide lineup of general-purpose 3-pin regulators featuring low power consumption, high current capability, and high voltage resistance. ROHM’s LDO’s are ideal for mobile phones, ...